| abstract |
(57) Abstract: A trench formed in a substrate and having an upper region and a lower region, an isolation collar formed in an upper region, and a lower collar. Buried well 17 through region 0, a buried plate 165 as an outer capacitor electrode formed around the lower region, and a dielectric layer 164 covering the lower region and the isolation collar And a conductive trench fill 161 to improve the controllability of the transistor contact connection. The substrate has a buried contact formed by implantation, plasma doping and / or vapor doping. |