http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000200830-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 |
| filingDate | 1999-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9c13b04493db6579b758001f94ec96f |
| publicationDate | 2000-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000200830-A |
| titleOfInvention | Method for manufacturing semiconductor device having trench element isolation region |
| abstract | (57) Abstract: Provided is a method of manufacturing a semiconductor device having a trench element isolation region, in which an insulating layer in a trench element isolation region is satisfactorily embedded. A method of manufacturing a semiconductor device having a trench element isolation region according to the present invention includes the steps of: Etching the silicon substrate 10 using the stopper layer 14 formed in a predetermined pattern as a mask to form a trench 16; forming an insulating layer 20 filling the trench 16 over the entire surface; A step of flattening the insulating layer 20 using the stopper layer 14 as a stopper; a step of removing the stopper layer 14; a step of forming a silicon layer 90 over the entire surface; Forming a side wall silicon film 92 covering the side wall; thermally oxidizing the side wall silicon film 92 to form a side wall protection film 94; and etching the protruding portion 22 and the side wall protection film 94 to form a trench isolation. Forming a region 23; |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9982157-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900414-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865620-B2 |
| priorityDate | 1999-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.