http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000196064-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-339
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148
filingDate 1998-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dabe812b52eae921d850fcd9f25f827
publicationDate 2000-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000196064-A
titleOfInvention Method for manufacturing solid-state imaging device
abstract (57) [Summary] (With correction) [PROBLEMS] To provide a method of manufacturing a solid-state imaging device capable of removing an etching residue. SOLUTION: A step of forming an interlayer insulating film 15 covering the transfer electrodes 13 and 14, and a step of forming a tungsten polycide film or a tungsten polycide film covering the step 30 formed by the transfer electrodes 13 and 14 and the interlayer insulating film 15 thereon. A step of forming a wiring layer 16 made of a polycrystalline silicon film, a step of forming a first resist pattern thereon, and performing anisotropic etching using this as a mask to form a wiring layer other than near the step portion 30 A first etching step of etching and removing the first resist pattern, a step of removing the first resist pattern, and a second resist pattern 19 covering the remaining wiring layer 16 serving as a wiring portion. And etching is performed under the condition that side etching is performed using this as a mask to remove the wiring layer 16 remaining as a residue in the vicinity of the step portion 30 by etching. And a method of removing the second resist pattern 19.
priorityDate 1998-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.