http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000188345-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 1999-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_567cec911d14cfc1b55608cfa9894042 |
| publicationDate | 2000-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000188345-A |
| titleOfInvention | Fabrication process of semiconductor nonvolatile memory device by shallow trench insulation |
| abstract | (57) [Summary] [PROBLEMS] To achieve shallow trench insulation (S Even with the TI) technology, a technical process is provided that can guarantee electrical continuity along a common power line of a matrix of memory cells. The first polysilicon line (7 ') has an interruption in the area of the active range line (3) that coincides with the future common power line of the matrix, so during the fifth etching sub-step, At the same time as the first polysilicon line (7 ') etching, the region of the active range line (3) which is not covered by the first polysilicon line (7') is the same as the region of the active range line (3). Characterized by being etched to reduce the level difference along the common power supply line with the area of the line (5) and thus to ensure the electrical continuity of the common power supply area of the memory device. Do |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100879733-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7867883-B2 |
| priorityDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.