http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000180895-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 1998-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcf2dc25b1c5018717ab03d09f8b1028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ec0602e283abd40a2959ff6b8edef33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eff0c630aaa1528297cdca27838cda5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fde54e36836b8fd9d1225fe2c622969 |
| publicationDate | 2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000180895-A |
| titleOfInvention | Electro-optical device, drive substrate for electro-optical device, and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To provide an active matrix substrate with a built-in high-performance driver and a display thin film using the same, by forming a single-crystal silicon thin film having high electron / hole mobility at a relatively low temperature and uniformly. It is desired to provide a method for manufacturing an electro-optical device such as a semiconductor device. A material layer having good lattice matching with a single crystal semiconductor is formed on one surface of a first substrate. A low-melting-point metal layer 6 made of a semiconductor film and tin or lead or an alloy of tin and lead, or a low-melting-point metal layer 6A containing a semiconductor. The single-crystal semiconductor layer 7 is crystal-grown using the material layer 50 as a seed by heating and further cooling the layer, and the single-crystal semiconductor layer 7 is subjected to a predetermined treatment to at least the active element of the active element and the passive element. To form |
| priorityDate | 1998-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.