http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000174121-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc2bb575e5038a00bea12249fa9a68f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e8b01b6d152d636e5f43c0fc3ef25cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fda0e1e1281b6cf2aa3ccd746c1de971 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f787e4a0c14430620714695819580fd6 |
| publicationDate | 2000-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000174121-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Problem] To reduce the resistance of copper wiring and to prevent diffusion of copper into an interlayer film. SOLUTION: An interlayer insulating film 11 composed of BCB is deposited, a wiring groove 12 is formed in the interlayer insulating film 11, and Cu ions 13 are formed by a sputtering method using ionized metal plasma. To form a lower Cu film 14 having a thickness of 10 nm on the surface of the interlayer insulating film 11. At this time, Cu is implanted into the surface of the BCB constituting the interlayer insulating film 11, and the BCB and the lower layer C The adhesion of the u film 14 can be improved. Next, a Cu film 15 is deposited by the CVD method to fill the wiring groove 12, and the Cu film 15 and the lower Cu film 14 outside the wiring groove 12 are polished by polishing. Is removed to obtain a Cu wiring 16. Under the Cu film 15 formed by the CVD method, the lower Cu film 1 is formed by the sputtering method. By forming 4, diffusion of copper into the interlayer insulating film 11 made of BCB can be prevented. Since the entire inside of the wiring groove 12 is made of a Cu film of a low-resistance metal, the Cu wiring 16 has a low resistance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6509279-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4672186-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8278218-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6746963-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002367993-A |
| priorityDate | 1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.