| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d5ebd9bdc11f7a4b267d7e865d5a84f |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2000-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca7088e5276f0cd82c2b97b521e3831a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e31f24acdd24e761ec954cefc05ba099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d2ebee11b5f5ac555b91cf60bded74c |
| publicationDate |
2000-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000164523-A |
| titleOfInvention |
Method of implanting impurities into semiconductor inner wall |
| abstract |
[PROBLEMS] To uniformly and continuously implant an impurity concentration and depth into an inner wall of a trench or a trench formed on a semiconductor surface. SOLUTION: After forming a groove, an inert film on an inner wall surface of the groove is removed, and an impurity component element or a compound of the impurity component is adsorbed on the activated inner wall of the groove to form an impurity film, thereby forming an impurity film. The impurities are thermally diffused into the inner wall and activated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012256289-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7547619-B2 |
| priorityDate |
1989-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |