| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5eeacd87de1c0a9d589df5321a91111e |
| publicationDate |
2000-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000156383-A |
| titleOfInvention |
Low voltage MOSFET, method of manufacturing the same, and circuit thereof |
| abstract |
(57) Abstract: A low-voltage MOSFET is provided. A power MOSFET die has a minimized merit coefficient and a planar stripe MOSFET geometry. A parallel diffusion base (or channel) is formed by implanting and diffusing impurities through parallel polysilicon stripes. The polysilicon line width is in the range of about 3.2 μm to 3.4 μm, preferably 3.4 μm. The polyline spacing is in the range of about 1 μm to 5 μm, 1.5 μm is preferred. 0.8μ diffused base m. The first base stripe, the source stripe, and the first high-concentration base stripe (having a higher concentration than the first base stripe) are formed using the polysilicon stripe as a mask. The insulating sidewall is used to define a contact etch for the source contact. The above design geometry is used for the forward control MOSFET and the synchronous rectification MOSFET of the buck converter circuit. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012134492-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7061048-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102163623-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7638827-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7034346-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101502306-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006128191-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6720618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7341900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6977226-B2 |
| priorityDate |
1998-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |