http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000150954-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3fc591c5e6cc87057b46b438948e0fe |
| publicationDate | 2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000150954-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | (57) [Problem] To provide a semiconductor light-emitting element having small on-axis spread of light emission, low resistance, and high luminous efficiency. SOLUTION: The semiconductor light-emitting element comprises a first conductivity type semiconductor substrate, a second conductivity type current diffusion layer, and GaAs or AlGaAs provided between the semiconductor substrate and the current diffusion layer. Or a light emitting layer including an active layer made of GaInAs, a second conductive type underlayer formed on the light emitting layer, and a first conductive type current blocking layer formed on a part of the base layer. . The second conductivity type current diffusion layer is formed to cover the second conductivity type underlayer and the first conductivity type current blocking layer. The underlayer and the current diffusion layer are made of GaP of the second conductivity type. Consists of |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110993756-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011176001-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011192821-A |
| priorityDate | 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.