Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11bc58f65eb7027c1449bc42f2813f58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_315e265e4a6977fccc2bca0f271444db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac6ca9bc768f34a1e637eddcc26e97bb |
publicationDate |
2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2000150501-A |
titleOfInvention |
SOI high voltage power device |
abstract |
(57) [Summary] [PROBLEMS] To secure a withstand voltage that cannot be achieved with an inorganic interlayer insulating film material. SOLUTION: A silicon ladder-based resin film is used as an interlayer insulating film of an SOI high withstand voltage power device to ensure the withstand voltage of a multilayer wiring structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009238980-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010016072-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6992363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4590931-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2849271-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011044726-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4629490-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006313828-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005330505-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006041135-A |
priorityDate |
1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |