http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000150422-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 |
| filingDate | 1998-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b55d3a62eb524584327c6edf3f4eb76 |
| publicationDate | 2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000150422-A |
| titleOfInvention | Method for manufacturing electrode of semiconductor device |
| abstract | An object of the present invention is to provide a method for manufacturing an electrode of a semiconductor device, which can form an electrode at low cost and with high precision without using a conventional evaporation method, sputtering method or the like. When an electrode is formed by performing an electroless plating process on a silicon wafer W capable of generating a photovoltaic force, the silicon wafer W is disposed inside a light shielding housing 10 and irradiated with the silicon wafer W. A light-shielding state is formed in which light is blocked, and electroless plating is performed in this light-shielding state. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085368-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004327519-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101986422-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4549636-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012031453-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006284797-A |
| priorityDate | 1998-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.