| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
1998-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aba1e14dd622c353be81d155e19af164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b7ab662201083224552f5e01247c276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f66036c0d72c20ceb275c4b15306d027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e287350bf6c9da88ead3a5107629769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace0892ce05d53065f2aaa6aea74f04d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d741173cbd530d223b6db3820039501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e54ad68940e7395be87a51f30aeef194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e009b828b0ac87939e35f6092beee21e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f2c86a36ff4ec4c66260d949c433d5c |
| publicationDate |
2000-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000138372-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
(57) [Problem] To make the gate oxide film thicker, the sharpness of the substrate and the local thinning of the gate oxide film become remarkable, and the gate breakdown voltage at the shallow trench element isolation end is deteriorated. SOLUTION: A shallow trench element isolation structure GROX directly under a gate electrode POLY11 and in contact with a gate insulating film HOX1. A bird's beak is provided at the end of I11 and a thick gate insulating film H OX1 is formed first. [Effect] A normal gate breakdown voltage, a good element isolation breakdown voltage and high integration of a MOS transistor can be simultaneously secured. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003060025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012109595-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004510330-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4550351-B2 |
| priorityDate |
1998-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |