| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
1998-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f08089d6d8e4c48f96087e01e1f10878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7ab32e5351e60c1ba4dac68dc038245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab28c17a22036634e782e54f82716496 |
| publicationDate |
2000-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000138296-A |
| titleOfInvention |
Semiconductor memory device and method of manufacturing the same |
| abstract |
(57) Abstract: To provide an SRAM capable of preventing a distance between a p-well (18) and a drain (28) of an n-well (16) from being shortened without increasing the length of a semi-cess LOCOS oxide film (20). . SOLUTION: The depth of an n-well 16 and a p-well 18 formed in a memory cell region 12 is larger than the depth of an n-well 42 and a p-well 44 formed in a peripheral circuit region 14. It is characterized by being small. Therefore, under the semi-recess LOCOS oxide film 20, the n-well 16 and the p-well 1 8 can be reduced. Therefore, the distance between the p-well 18 and the drain 28 of the n-well 16 can be prevented from being shortened without increasing the length of the semi-recess LOCOS oxide film 20. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100399772-B1 |
| priorityDate |
1998-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |