http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000138170-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 1998-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b5b6fe0e0ef5d675109530473429d05
publicationDate 2000-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000138170-A
titleOfInvention Semiconductor manufacturing equipment
abstract (57) Abstract: In a semiconductor manufacturing apparatus, the uniformity of the film thickness distribution of a thin film formed on a wafer surface can be improved. SOLUTION: A lid 14 of the epitaxial growth apparatus 10 is provided. Inside, a plurality of inner heating halogen lamps 24 In for mainly heating the inner region of the wafer W and a plurality of outer heating halogen lamps 24 Out for mainly heating the outer region of the wafer W are provided. They are arranged radially. Inside the halogen lamp 24, a substantially cylindrical gold-plated shield member 30 is installed. Each outer end position of the heating halogen lamp 24 portion corresponding to the Out each inner heating halogen lamp in 24 an In Is lower than the lower surface position of the portion corresponding to. For this reason, infrared rays to be directed from the outer heating halogen lamps 24 Out to the inner region of the wafer W are reflected by the shield member 30 and directed to the outer region of the wafer W.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752277-B
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priorityDate 1998-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.