| abstract |
(57) [Summary] [PROBLEMS] To increase the dissolution rate during development, to perform uniform development, to prevent pattern collapse during rinsing, and to prevent swelling of the polymer thin film during drying. To prevent. SOLUTION: A resist film 2 on a substrate 1 in a reaction chamber is exposed, and the resist film 2 is exposed to a high-pressure supercritical carbon dioxide 5 to which a dissolution promoter has been added, and development is performed. 3 is removed, and the substrate 1 is exposed to low-pressure supercritical carbon dioxide 6 for rinsing. In this state, the low-pressure supercritical carbon dioxide 6 is released from the reaction chamber, and drying is performed using the pressure in the reaction chamber as the atmosphere. |