http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000123721-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-316
filingDate 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3175502a2299330124621fa679295e68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_004bbf2ee366f80f56379aee769f7fcf
publicationDate 2000-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000123721-A
titleOfInvention Method of manufacturing electron-emitting device, and electron source and image forming apparatus using this electron-emitting device
abstract (57) [Problem] To provide an electron-emitting device as an electron beam source capable of realizing a high-quality image forming apparatus. SOLUTION: In a method for manufacturing an electron-emitting device having an electron-emitting portion between electrodes facing each other via a narrow gap, an electron beam is applied to a conductive thin film formed on a substrate to constitute the counter electrode. The method is characterized in that the narrow gap is formed by irradiating the conductive thin film to modify a portion corresponding to the narrow gap portion, and then performing dry etching.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100752862-B1
priorityDate 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.