http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000123721-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-316 |
filingDate | 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3175502a2299330124621fa679295e68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_004bbf2ee366f80f56379aee769f7fcf |
publicationDate | 2000-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2000123721-A |
titleOfInvention | Method of manufacturing electron-emitting device, and electron source and image forming apparatus using this electron-emitting device |
abstract | (57) [Problem] To provide an electron-emitting device as an electron beam source capable of realizing a high-quality image forming apparatus. SOLUTION: In a method for manufacturing an electron-emitting device having an electron-emitting portion between electrodes facing each other via a narrow gap, an electron beam is applied to a conductive thin film formed on a substrate to constitute the counter electrode. The method is characterized in that the narrow gap is formed by irradiating the conductive thin film to modify a portion corresponding to the narrow gap portion, and then performing dry etching. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100752862-B1 |
priorityDate | 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.