http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000114254-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1998-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af8adf290f77f2c1890324c1adc69a2 |
| publicationDate | 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000114254-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | [PROBLEMS] To remove a resist residue and a reaction product after forming a wiring pattern and improve pattern dependency when forming an insulating film by a reaction between ozone and an organic silicon compound. To provide a method for manufacturing a semiconductor device. SOLUTION: After forming a wiring pattern 32, O 3 -TE Before the formation of the OS-NSG film 33, the silicon substrate 30 is exposed to a resist stripping solution composed of an organic solvent, water and a fluorine compound. The upper Al wiring pattern 32 and the oxide film 31 are processed. Thereby, the pattern dependency of the O 3 -TEOS-NSG film 33 can be improved while removing the resist residue and the reaction product. |
| priorityDate | 1998-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.