http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000114148-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 1998-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09220d7f052ea07478eb2bcfcf6fcdb8
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publicationDate 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000114148-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Problem] To achieve high-accuracy mask-wafer alignment in X-ray lithography. SOLUTION: A wafer 8 is irradiated with a soft X-ray 3 passing through an X-ray mask 4 via an imaging optical system including reflecting mirrors 6 and 7 to form a soft X-ray 3 on a transfer pattern area 4a of the X-ray mask 4. X for transferring circuit pattern to wafer 8 In the line exposure apparatus, a wafer mark 9 provided on a wafer 8 is made of a substance that emits light 1 such as fluorescence when irradiated with soft X-rays 3 and is reflected from an alignment mark pattern 5 of an X-ray mask 4. The soft X-rays 3 are reduced and imaged, and irradiate a wafer mark 9 on the wafer 8, and light emission 1 such as fluorescence generated at this time is detected by the photodetector 2, thereby forming the X-ray mask 4 and the wafer 8. Is performed with high accuracy.
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type http://data.epo.org/linked-data/def/patent/Publication

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