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publicationDate 2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000101100-A
titleOfInvention Semiconductor device
abstract (57) [Problem] To reduce the leakage current by suppressing the reaction between SiC and a Schottky electrode. SOLUTION: In a semiconductor device in which a Schottky junction is formed between SiCs 1 and 2 and electrodes, iron, ruthenium, osmium, iridium, rhodium or an alloy thereof is used as a Schottky electrode 4.
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