| abstract |
(57) [Problem] To provide a gallium nitride-based compound semiconductor light emitting device capable of improving the light extraction efficiency on the main light extraction surface side and the emission intensity distribution immediately above the device. SOLUTION: A substrate 1 that is translucent and conductive and has a first main surface and a second main surface, and a semiconductor stack of a gallium nitride-based compound semiconductor stacked on the first main surface A p-side electrode 7 provided on the surface of the uppermost layer of the semiconductor multilayer structure, and an n-side electrode 6 provided on the second main surface, The second main surface is the main light extraction surface side, the p-side electrode 7 is formed on almost the entire surface of the uppermost layer of the semiconductor multilayer structure, and the n-side electrode 6 is formed on a part of the peripheral portion of the second main surface or Formed into all, Uniform light emission over the entire surface of the active layer 3 is ensured, and the amount of light extracted from the main light extraction surface side is increased. |