| abstract |
(57) [Summary] [PROBLEMS] To reduce process cost by reducing the number of steps. SOLUTION: A plurality of grooves 5 are formed in the main surface of semiconductor layers 3a and 3b on a semiconductor substrate 1, and gate layers 7a and 7b connected to a gate electrode are formed in the plurality of grooves 5 by a gate insulating film 6a. And a body diffusion layer 8 is formed between the gate layers 7a and 7b. Thereafter, a source diffusion layer 13a connected to the source electrode 15b and a source diffusion layer 13b connected to the source electrode 15d are formed. They are formed in the same process. |