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filingDate 1998-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_419f29bf890b36d7589c1cc1ce78a15b
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publicationDate 2000-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000086384-A
titleOfInvention Silicon single crystal pulling method
abstract (57) [Summary] Even if the V / G 1 value enters an interstitial silicon type glow-in defect region, the concentration of supersaturated interstitial silicon can be kept low, and the aggregation start temperature can be lowered. Further, the size of the dislocation cluster can be reduced. SOLUTION: A silicon single crystal 11 is pulled up from a silicon melt 13 stored in a quartz crucible 14. When the pulling speed of the silicon single crystal 11 is V (mm / min) and the temperature gradient in the crystal axis direction in the temperature range from the melting point of silicon to 1300 ° C. is G 1 (° C./mm), the silicon single crystal 11 In all positions from the center to the outer periphery, 0.18 (mm 2 / min · ° C.) ≦ V / G 1 <0.2 (m m 2 / min · ° C.) to pull up the silicon single crystal 11.
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