| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05a31d15146049253ebe5354fed884ea |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1999-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08cd8069d01dd1476ab0878bdd639b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81b637fd8fe198f969e9cdc95aeba6cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65b9ea451f1668ee96cc146d23828c29 |
| publicationDate |
2000-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000077546-A |
| titleOfInvention |
Nonvolatile memory device and method of manufacturing the same |
| abstract |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element whose manufacturing process is simple and a manufacturing method thereof. A non-volatile memory device is manufactured by forming an oxide film on a semiconductor substrate, heat-treating the substrate in an atmosphere of NO or N 2 O, and forming a first silicon oxynitride containing nitrogen. Forming a gate dielectric film 33a in which the region A and the second silicon oxynitride region B containing a relatively small amount of nitrogen as compared with the first silicon oxynitride region A are vertically distributed in the oxide film; The method includes a step of forming a gate electrode 35a on the gate dielectric film 33a, and a step of forming source / drain impurity diffusion regions 37 and 37a in the surface of the semiconductor substrate 31 on both sides of the gate electrode 35a. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001358237-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6664577-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053826-B2 |
| priorityDate |
1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |