| abstract |
(57) [Summary] [Constitution] CO using SnO 2 -based metal oxide semiconductor After sintering of the sensor, the I of each 5-500 μg / g SnO 2 r and Pt are added at a weight ratio of 5/5. The addition is performed by impregnating an aqueous solution of a mixture of an Ir salt and a Pt salt into a SnO 2 sintered body and thermally decomposing the SnO 2 sintered body. Next, an SnO 2 sintered body is impregnated with an aqueous solution of thiourea, and is converted to an S-based solution of 0.01 to 0.01%. Adding thiourea 10mg / gSnO 2. [Effect] The dependence of the temperature and humidity of the CO sensor is suppressed, the dependence of the output on the CO concentration is increased, and the sensor resistance is set to an easy-to-handle range. |