http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000068344-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_430c829e2afabd867a0beacfb543fbc1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91df99d04cc10b5fb5a84826df058978 |
| publicationDate | 2000-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000068344-A |
| titleOfInvention | Method for evaluating semiconductor substrate and method for managing manufacturing process of semiconductor device |
| abstract | [PROBLEMS] To provide a method for detecting the depth of a damaged layer of a semiconductor substrate by distinguishing only those which are problematic in characteristics of a semiconductor device. SOLUTION: An Si substrate 1 is set on a stage 2, and a mercury electrode 3 constituting a Schottky barrier between the Si substrate 1 and the Si substrate 1 is in contact with the surface of the Si substrate 1. When a constant current is applied between the mercury electrode 3 and the Si substrate 1 by the constant current power supply 4, charges are trapped at the capture center in the damage layer of the Si substrate 1 and the conduction band near the surface of the Si substrate 1 is reduced. Potential rises. Then, a constant current flows by increasing the voltage between the two according to the rise. The defect density can be estimated by measuring the time-dependent change of this voltage (the amount of change in voltage when the voltage is saturated) with the voltmeter 5, so that the depth of only the damaged layer having a large damage can be detected. . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111033711-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006030723-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7633305-B2 |
| priorityDate | 1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23931 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556032 |
Total number of triples: 20.