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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
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filingDate 1998-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b929bfa3f819597d83941f229d8b9753
publicationDate 2000-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000065702-A
titleOfInvention Low voltage discharge type plasma ion deposition system
abstract (57) [Problem] In a plasma ion film forming apparatus for forming an organic synthetic film or an osmium film on a sample surface, a sample is formed without damage to the sample by lowering a discharge voltage and increasing a plasma density. Of plasma ion deposition system with high speed. SOLUTION: A negative electrode 2 is a hollow cathode type, and a DC voltage is applied between the negative electrode 2 and an opposed anode electrode 3 so that the same discharge current can be obtained at a voltage less than half of that of a conventional parallel electrode type diode discharge. By utilizing the fact that the generated plasma is confined in the cup-shaped cathode and the plasma ion density is increased, an organic synthetic film or a metal osmium film is placed on the surface of the sample S placed in the hollow cathode. And a plasma ion film forming apparatus capable of efficiently generating ions without ion damage.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011144418-A
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Total number of triples: 21.