http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000054144-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 1998-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ac9344bab15c1c7a8b84974e956ea33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcad47de31daf3063e0f806c065dddd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c954d4181fc3e9415e0866dbb503634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7524eff1aea412440744825f9189e6a5 |
| publicationDate | 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000054144-A |
| titleOfInvention | Method and apparatus for forming a deposited film by plasma CVD |
| abstract | PROBLEM TO BE SOLVED: To stabilize a gas flow in a reaction vessel, constantly form a deposited film having a uniform thickness and quality, drastically reduce image defects, enable mass production, and increase yield. Provided is a method and an apparatus for forming a deposited film by a plasma CVD method which can be improved. SOLUTION: A cylindrical support is arranged on a cylindrical support holding means in a cylindrical reaction vessel of a film forming apparatus by a plasma CVD method, and is disposed on a coaxial outer periphery of the support along a longitudinal direction of the support. A source gas for film formation is introduced into a cylindrical reaction vessel through a plurality of provided source gas introduction pipes, discharge energy is introduced into the reaction vessel, and the source gas for film formation introduced into the reaction vessel is provided. Excited seeding, of the deposition film forming method of forming a deposition film on the surface of the cylindrical support, providing a gas distribution pipe for supplying a source gas from a source gas supply source to a plurality of source gas introduction pipes, A method for forming a deposited film in which a distribution pipe has at least a double pipe configuration and an inner pipe of the double pipe is connected to a source gas supply source. |
| priorityDate | 1998-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.