http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000054143-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 1998-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7524eff1aea412440744825f9189e6a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c954d4181fc3e9415e0866dbb503634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ac9344bab15c1c7a8b84974e956ea33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcad47de31daf3063e0f806c065dddd |
| publicationDate | 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000054143-A |
| titleOfInvention | Method and apparatus for forming a deposited film by plasma CVD |
| abstract | PROBLEM TO BE SOLVED: To stabilize a gas flow in a reaction vessel, constantly form a deposited film having a uniform thickness and quality, drastically reduce image defects, enable mass production, and increase yield. Provided is a method and an apparatus for forming a deposited film by a plasma CVD method which can be improved. SOLUTION: A cylindrical support is arranged on a cylindrical support holding means in a cylindrical reaction vessel of a film forming apparatus by a plasma CVD method, and is disposed on a coaxial outer periphery of the support along a longitudinal direction of the support. The source gas for film formation is introduced into the cylindrical reaction vessel through a plurality of source gas introduction pipes provided, and discharge energy is introduced into the reaction vessel, and the discharge energy is introduced into the reaction vessel. In the deposited film forming method of forming a deposited film on the surface of the cylindrical support by exciting and transforming a source gas for film formation into a deposited film, the source gas introducing pipe is formed in at least a double pipe configuration. A method and apparatus for forming a deposited film, wherein the pipe is connected to a source gas supply source, and the total length is shorter than the outer pipe of the double pipe. |
| priorityDate | 1998-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.