http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000053596-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N31-005 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C7-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
filingDate | 1999-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b9b1586ea5b5f15b8b0f453e68806b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33005eb17407dcce951bdda9ca017a5f |
publicationDate | 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2000053596-A |
titleOfInvention | Method for selecting silicon metalloid in organohalosilane direct production method |
abstract | (57) [Problem] To provide a method for selecting chemical-grade silicon for use in an organohalosilane direct production method. SOLUTION: A sample of a chemical-grade silicon metalloid is heated at a temperature rising rate controlled to gradually reduce oxide impurities present in the chemical-grade silicon metalloid by 230%. Heating in the presence of a carbon source to a temperature above 0 ° C., thereby forming a reduction product consisting of carbon monoxide and carbon dioxide, based on the amount of the reduction product formed above 1900 ° C. A method for selecting a chemical-grade silicon metalloid for use in a method for directly producing an organohalosilane, based on the oxygen concentration of the metal-grade silicon metalloid. |
priorityDate | 1998-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.