http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000049246-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1999-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f0c6a878573d5bed68dcdb8fb291671 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c9d39db6e3d1847cc6b66e7121b02b2 |
| publicationDate | 2000-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000049246-A |
| titleOfInvention | Method of manufacturing MIS type semiconductor device |
| abstract | [PROBLEMS] To provide a method of manufacturing a MIS type semiconductor device suitable for performing burn-in in a wafer state. SOLUTION: An oxide film 103 is formed on a main surface of a P-type substrate 104. After the formation of the gate electrode conductor film 1 on the oxide film 103, 02 is deposited. The electrode-side terminals 100 and the substrate-side terminals 101 are crimped on both surfaces of the wafer, respectively, to form an oxide film 10. 3 is stressed. Since no wiring is formed, the wafer can be heated to a high temperature to increase the amount of current immediately below the oxide film 103, accumulate a large amount of carriers, and increase the temperature acceleration of oxide film destruction, thereby increasing the stress. The application time can be greatly reduced. Also, By providing a light introducing hole in the gate electrode conductive film 102 and irradiating light from above, the amount of accumulated carriers can be further increased. Stress can also be applied to the oxide film using the charge generated by the plasma. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005045012-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4545401-B2 |
| priorityDate | 1998-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 |
Total number of triples: 24.