http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000048759-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d5ebd9bdc11f7a4b267d7e865d5a84f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31744 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q30-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-225 |
| filingDate | 1998-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb95a364a75bd418f9f38f3705850b0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3bd200dc9fcddeeda7a07d44df24112 |
| publicationDate | 2000-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000048759-A |
| titleOfInvention | Observation and processing method and apparatus using focused ion beam |
| abstract | An object of the present invention is to provide a method for preventing a sample from being damaged when irradiating an ion beam for obtaining a SIM image, and an apparatus for implementing the method. It is in. In particular, it is an object of the present invention to provide a repair processing method and an apparatus therefor which do not damage an underlying substrate or a pattern due to ion beam irradiation at the time of SIM image observation when a defect is repaired in a semiconductor photomask using an ion beam. It is. SOLUTION: When a focused ion beam is scanned to detect secondary charge particles emitted from the surface of the sample and obtain an observation image of the surface of the sample, the sample is irradiated with the beam to prevent damage to the sample. By forming a water vapor atmosphere around the surface of the sample, an adsorption layer of water vapor is formed in the observation area of the sample surface, In order to prevent the damage to the underlying substrate and the pattern during the SIM image observation when correcting the defect of the photomask by the ion beam irradiation, a steam atmosphere is provided around the processed part, A SIM image is obtained by irradiating and scanning with an ion beam. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013228711-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007207758-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008140557-A |
| priorityDate | 1998-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.