http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000031060-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1998-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3754cbd88116698522e46809d8b7f24f |
| publicationDate | 2000-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000031060-A |
| titleOfInvention | III-V compound semiconductor vapor phase epitaxial growth method and growth apparatus |
| abstract | (57) Abstract: Vapor phase epitaxial growth of a group III-V compound semiconductor capable of reducing the impurity concentration in an AlGaAs layer without increasing the V / III ratio (increase of AsH 3 supply). It is to provide a method. A supply vessel (8, 9) for separately introducing a group III raw material gas and a group V raw material gas is provided in a reaction vessel (1). A heater 10 for promoting the decomposition of the raw material gas is provided, and a group V raw material gas heated in advance is supplied separately from the group III raw material gas to promote the decomposition of the group V raw material in the growth region, thereby enriching the group V radical. The group V radical acts to break the bond between the metal of the organometallic compound reaching the GaAs substrate 5 and carbon or oxygen. Thus, the concentration of impurities taken into the AlGaAs growth layer is reduced without increasing the V / III ratio during growth. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7501352-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006524911-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4700602-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012009581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7517814-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645340-B2 |
| priorityDate | 1998-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.