http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000021997-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7b14d042df40dc006f43428e7f790f9 |
| publicationDate | 2000-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000021997-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) Abstract: To form a complementary MIS transistor on a semiconductor substrate, a junction capacitance and a photolithography step are reduced. SOLUTION: When a complementary MOS transistor is formed on a P-type semiconductor substrate 1, an N-type impurity is introduced into the entire thickness of the gate electrodes 8 and 9 so that the N-type impurity is deep and deep in the gate electrode 9. The need for ion implantation is eliminated. Therefore, the source and drain regions having the required concentration and depth can be formed in the N-type MOS transistor region, and the junction capacitance can be reduced. Since these N-type impurities have sufficiently low concentrations, the polarity can be easily inverted by implanting P-type impurities at a conventional concentration. |
| priorityDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.