http://rdf.ncbi.nlm.nih.gov/pubchem/patent/IE-911059-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1991-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1991-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | IE-911059-A1 |
| titleOfInvention | Process and apparatus for producing conductive layers or¹structures for circuits integrated on the very largest scale |
| abstract | In a process for manufacturing conductive layers or structures for highly integrated circuits, at least two process steps are carried out immediately one after the other in different chambers (1 to 6) of a high-vacuum system, without interrupting the high-vacuum conditions for the semiconductor substrate. Avoiding exposure to air between the process steps yields markedly better layer properties and makes possible, in particular, simple and reliable multistage processes for manufacturing conductive layers which assist multilayer interconnection on the semiconductor substrate. An apparatus used comprises several high-vacuum process chambers (1 to 6), at least one high-vacuum distribution chamber (7) linking the process chambers and at least two high-vacuum storage chambers (8, 9) for semiconductor substrates. |
| priorityDate | 1990-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.