http://rdf.ncbi.nlm.nih.gov/pubchem/patent/IE-910006-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_682d6117f1aef86a7b2b9af096d7d98a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 1991-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a89b17bf0505a469775a96e186256d34 |
| publicationDate | 1991-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | IE-910006-A1 |
| titleOfInvention | Method of Depositing Diamond-Like Film Onto a Substrate Having a Low Melting Temperature |
| abstract | A diamond-like carbon film is deposited on an insulating substrate using a solid carbon source evaporated by an electron beam so as to maintain the substrate temperature below about 150 DEG C. in a differentially evacuated chamber containing a selective etchant gas such as hydrogen. In orer to bombard the substrate with positively charged ions while preventing accumulation of a repulsive surface charge, a radio frequency (RF) electric field is applied to a rotating fixture holding the substrate. The differentially evacuated chamber maintains the atmospheric pressure around the solid carbon source at one end of the chamber at a sufficiently low pressure to prevent loss of electron beam energy and thereby enable vaporization of the carbon while maintaining the substrate at the other end of the chamber at a higher pressure which enables the RF electric field to excite an ion gas plasma around the substrate and thereby facilitate deposition of the diamond-like carbon film. In the preferred embodiment, the differentially evacuated chamber has a bypass manifold connected between the two ends of the chamber. A control system responding to pressure sensing apparatus inside the chamber governs the position of a butterfly valve in the bypass manifold to regulate the differential pressure in the chamber. In order to keep the substrate temperature below about 150 DEG , the rotating fixture holding the substrate is water-cooled. |
| priorityDate | 1990-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.