http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-957510-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b675aadb7e931e98100ba238b30bd7a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0104 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3107 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-495 |
| filingDate | 1960-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1964-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-957510-A |
| titleOfInvention | Semiconductor devices |
| abstract | 957,510. Semi-conductor devices. PACIFIC SEMICONDUCTORS Inc. May 23, 1960 [Oct. 19, 1959], No. 18108/60. Heading H1K. A semi-conductor device comprises a semiconductor crystal element with two opposite plane parallel faces of differing conductivity material, overlapping first and second leads of which the overlapping parts have flat faces each in ohmic contact with one of the said faces of the crystal element and an esterified film formed on the crystal element at those portions of its surface not in contact with the leads. As shown, Fig. 3, a silicon crystal wafer 20 comprising a PN junction has ribbonshaped leads 15, 16 of gold-plated nickel ohmically bonded to its P-type and N-type regions respectively, as by alloying under pressure. The gold coatings may be slightly doped with impurities, e.g. boron, arsenic, characteristic of the same conductivity types as the regions of the wafer to which alloying is effected. The leads 15, 16, which may alternatively be of molybdenum or " Kovar " (Registered Trade Mark), extend in opposite directions from the crystal and are preferably formed co-planar by bending lead 16 as shown. The device is immersed in an etchant containing hydrofluoric acid (e.g. 2 : 1 by vol. HF (40% conc. in H 2 O) : HNO 3 (90% conc. in H 2 O)); this forms fluorosilicic acid at the crystal surface which, when the device is quenched in a solution such as a monohydric or polyhydric aliphatic alcohol containing 1 to 4 carbon atoms per molecule, preferably a 95% ethanol solution, reacts with the hydroxyl radical to form ester groups molecularly bonded with the silicon as a thin protective film 30 upon the exposed surface of the wafer 10. A second, more rugged, encapsulation is provided; e.g. a varnish comprising silicone modified organic polymer is painted on the device, from which any free alcohol has been removed by evaporation, and heat-cured. Alternatively, a relatively thick film is produced by reacting the esterified semi-conductor surface with polyfunctional organo-silicon monomers to produce crosslinked or space polymers integrally bonded to the silicon surface. Suitable compounds include ethyl triethoxysilane, methyl triethoxysilane, phenyl trihydroxysilane &c. to which are added difunctional and/or monofunctional organosilicon monomers, the trifunctional compound being hydrolysed, if necessary to the hydroxy compound in a medium of water, amyl alcohol, toluene, or hydrogen chloride, just prior to use. Other encapsulating means may be used, e.g. encapsulation by glass or ceramic or, as shown in Fig. 6, an aluminized ceramic sleeve 35 around the diode is filled with a potting compound such as an epoxy resin which may be used in combination with a filler such as cerium oxide, alumina, zirconium orthosilicate, zirconium oxide, silicon dioxide, mica, talc. The diode may exhibit the characteristics of a voltage-sensitive capacitor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S537372-Y1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012068560-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257878-B2 |
| priorityDate | 1959-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.