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filingDate 1962-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1964-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-955019-A
titleOfInvention Thermoelectric materials and devices prepared therefrom
abstract A thermoelectric material consists of a sulphide, selenide, telluride or phosphide of a lanthanum group or actinium group metal doped with a chalcogenide of a monovalent or divalent metal. Specifically the material has the Th3P4 crystal lattice structure and has the formula AM2y1Z2xBy1 or ANyZxBy where A is at least one element and the lanthanum or actinium series; M is at least one of Li, K, Na, Co, Ag and Au; N is at least one of Ba, Sr, Mg, Ca, Cd, Sn, Pb, Cu and Zn; Z is at least one of S, Se, Te and P; B is at least one of S, Se, Te and O. x lies between 1.33 and 1.5 y1 lies between 0.001 and 3x-4/5 y lies between 0.001 and 3x-4. The lanthanum series includes cerium, praeseo dymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutechium. The actinium series includes thorium, proctactinium, uranium, neptunium, plutonium, americium, cerium, berkelium, californium, einsteinium, fermium and mendelevium. Specific embodiments include examples of cerium sulphide diluently doped with divalent strontium sulphide. The materials were mixed, sintered at 1350 DEG C., finely ground, compressed and sealed in a molybdenum bomb and heated to about 1400 DEG C., cooled and then cut into cylindrical pellets. Compositions such as CeSr1.39(SrS)0.71 and CeSr1.42(SrS).09 resulted. The material may be used for Secbeck or Peltier devices and is useful for applications with temperatures above 550 DEG C.
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