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filingDate 1962-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1964-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-948588-A
titleOfInvention Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate
abstract <PICT:0948588/C3/1> Bodies of high electrical resistance, e.g. silicon, germanium, gallium arsenide, are uniformly plated with a metal, by disposing the body in the form of a solid wafer 15 as a bipolar electrode between an anode and cathode 18, e.g. of pure aluminium, immersed in an electrolyte from which metal is deposited on the face of the wafer disc facing the anode. The electrolyte is contained in two half-U tubes connected at their lower ends by a cap and nut 13, 14, which includes two apertured diaphragms 16, made of epoxy resin and clamped between the flanges of the glass U tube and holding the wafer disc. The aperture of diaphragm facing the cathode is of frustoconical form to promote the escape of gases. The electrolyte specified is one part NaF and two of Al(Et)3, used at 100 DEG C., and forms a uniform aluminium coating on the silicon disc wafer, which coating may be tempered by heating.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111663167-A
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Total number of triples: 24.