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filingDate 1962-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1963-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-945018-A
titleOfInvention Process of chemical metal plating and baths therefor
abstract A chemical plating bath for coating metals or plastics with metal comprises a solution containing a salt of the plating metal, a boron compound with 1-4 hydrogen atoms selected from alkali metal borohydrides, alkylamino boranes, alkylamino borines and borozoles as reducing agents, and at least one soluble organic sulphur compound having a CSC grouping. The solution may additionally contain one or more compounds of the metals of Group IIb, IIIb, IVb, Vb and VIb of the Periodic System, buffers such as sodium acetate, citrate or tartrate and complex formers such as ethylene diamine, ethanolamine, tetramethylene diamine, diethylene triamine, triethylene tetramine, ethylenediamino tetraacetic acid and nitrilotriacetic acid. The plating metals specified are Ni, Co, Fe and Zn and the materials coated may be Ni, Cu, brasses, Al, Fe and plastics such as acetyl cellulose, cellulose acetobutyrate, P.V.C., polyamides, polyurethanes, polystyrene, polycarbonates, polyacrylates, polyethylene and polypropylene. In the case of plastics they are first pretreated in a solution of NaOH and a wetting agent followed by a solution of stanuous chloride hydrochloric acid and a wetting agent and then a solution of palladium chloride and hydrochloric acid. The salts of the plating metals may be the nitrates, formates, chlorides, sulphates or acetates and the organic sulphur compounds may be sulphur containing aliphatic carboxylic acids, alcohols and their derivatives, sulphur containing aromatic/aliphatic carboxylic acids, sulphur containing acetylenic compounds, aromatic sulphides, thiophenes and thionaphthenes, and thiazoles. Many examples of these sulphur compounds are given. The preferred coating solution contains 0.1-10 g/1. of the boron compound, 0.02-0.5 mol/1. of the plating metal salt, 0.001-5 g/1. of the organic sulphur compound, 0.001-1 g/1. of compounds of the other metals, 5-200 g/1. buffers and 0.2-5 mol/1. of complex formers.
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