http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-938083-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e5302e08e56037ff7bc5c9b6fcc29f9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D241-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G15-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D241-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00 |
| filingDate | 1960-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1963-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-938083-A |
| titleOfInvention | Improvements in and relating to photoconductive material |
| abstract | Photoconductive tetragonal crystalline indium sesquisulphide is produced by forming a mixture comprising indium and sulphur, the sulphur being present in excess of the stoichiometric amount thereof, and a total addition of from 0 to 1 atom per cent of such mixture of one or more of the following elements; copper, silver, gold, zinc, cadmium, mercury, germanium, tin, lead, nitrogen, phosphorus, arsenic, antimony, fluorine, chlorine, bromine or iodine and then placing such mixture into a vessel which is evacuated and then sealed. A portion of the vessel is heated to a temperature of at least 1050 DEG C., while the other portion of the vessel is maintained at a substantially lower temperature thereby maintaining a part of the sulphur in the liquid state and controlling the sulphur vapour pressure. The temperature of the cooler portion of the vessel is then progressively raised to the temperature of the rest of the vessel to obtain a homogeneous melt The homogeneous melt is progressively cooled in the vessel to room temperature and indium sesquisulphide is recovered in which indium and sulphur are present in substantially stoichiometric proportions. To improve the photoconductive properties, the melt or the final crystals may be subjected to thermal treatment which can be carried out either during the final cooling step of the melt or after the photoconductive crystals have been prepared. The treatment is a two-step annealing process in which the melt or the crystals are heated under a sulphur atmosphere, the first step being between 900 DEG and 750 DEG C. and the second step between 350 DEG and 200 DEG C. |
| priorityDate | 1959-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.