http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-931411-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1959-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1963-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-931411-A |
| titleOfInvention | Improvements in or relating to a method of manufacturing silicon semi conductor devices |
| abstract | 931,411. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Nov. 10, 1959 [Nov. 13, 1958], No. 38072/59. Class 37. An alloy-junction silicon transistor or crystal diode is made by alloying to a body of silicon a material consisting mainly of indium and comprising at least one other significant impurity having a segregation constant in silicon exceeding that of indium, at a temperature between 900‹ C. and the melting point of silicon, preferably above 1050‹ C. The additional significant impurity may be aluminium, the aluminium content in the material not exceeding 1% by weight, e.g. 0.5%, or aluminium and antimony may be added, the ratio between the atomic concentrations of the antimony and the aluminium exceeding the ratio between their segregation constants in silicon. After alloying and cooling, the resolidified indium alloy may be removed by etching and replaced by a higher melting point metal or alloy e.g. by tin, lead or bismuth or an alloy of these metals with a donor or an acceptor and/or with silicon, e.g. by alloying and/or by electro-deposition. A small quantity of replacement material may be applied by vaporisation and melting, after which a further quantity of replacement material may be applied galvanically. In an example an alloy of indium and aluminium is alloyed to one face of a disc of monocrystalline N-type silicon having a resistivity of 1 ohm-cm., at a temperature of 1100‹C. in a hydrogen atmosphere and, after cooling, a pellet consisting of an alloy of gold and antimony, the antimony content being 5% by weight, is alloyed to the opposite face of the silicon disc at a temperature of 700‹ C. Dimensions are given. |
| priorityDate | 1958-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.