http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-919524-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b30d807376962224a66aa244d678104a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C1-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B35-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B35-04 |
| filingDate | 1959-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1963-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-919524-A |
| titleOfInvention | Boron-containing compounds |
| abstract | Two forms of crystalline boron arsenide are prepared by contacting the vapour of a volatilized boron compound with arsenic vapour at 700 DEG -1200 DEG C. in the presence of hydrogen. At 700 DEG - below 900 DEG C. black empirical formula BAS in cubic crystals of unit cell length 4,78 is obtained, and at 900 DEG -1200 DEG C. the product is tan empirical formula B6As in orthorhombic crystals of unit cell dimensions a=9,710 , b=4,343 , and c=3,066 , although orthorhombic crystals are stated to be B5As to B7As. The cubic form is converted to the orthorhombic form by heating at 900 DEG -1200 DEG C. Boron halides, e.g. BCl3, may be reacted with excess As in the presence of 10% H2, preferably in an inert gas atmosphere, e.g. N2, A, or He. The arsenic may be vaporized from solid, or from decomposable As compounds. Shaped refractory articles, e.g. crucibles, nose cones, turbine blades, deflectors, and nozzles may be prepared from orthorhombic boron arsenide. Thus, pressed bodies may be sintered, with, or without, organic resinous polymer binders, at 1300 DEG -2500 DEG C., and hot pressing a moulded boron arsenide body at 1000 DEG -2000 DEG C. gives a refractory body where part of the arsenide has been decomposed to boron. Both forms of the arsenide may be used as semiconductor materials, with or without other crystalline materals e.g. Si or Ge, and modifier impurities, e.g. Zn or Se. Optical windows for test instruments, guided missiles, or space ships may be made of the arsenides, or may consist of a layer of the arsenide on quartz. The orthorhombic arsenide has a characteristic wavelength transmission which permits its use for windows for furnaces, or nuclear reactors.ALSO:Shaped refractory articles, e.g. crucibles, nose cones, turbine blades, deflectors, and nozzles, may be prepared from orthorhombic crystalline boron arsenide. Pressed bodies may be sintered with, or without, organic resinous polymer binders, at 1300-2500 DEG C. Hot pressing a moulded boron arsenide body at 1000-2000 DEG C. gives a refractory body where part of the arsenide has been decomposed to boron. |
| priorityDate | 1958-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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