http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-892028-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9de1e190b9d4ede49d0a3410665ea0f9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223 |
| filingDate | 1959-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1962-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-892028-A |
| titleOfInvention | Semiconductor device |
| abstract | 892,028. Semi-conductor devices. BENDIX CORPORATION. June 26, 1959 [July 25, 1958], No. 22071/59. Class 37. A method of making a semi-conductor device comprises coating a semi-conductor body with a solution of an oxygen compound of a group III or V element, evaporating the solvent and then heat treating the body under such conditions as to slowly reduce the compound and diffuse the released element into the body. In an example, a saturated solution of antimony trioxide is prepared by mixing pure antimony trioxide with glacial acetic acid, agitating the mixture, allowing solid matter to settle out and filtering the liquid residue. The solution is then applied to the lapped germanium wafer which after evaporation of the solvent in air is fired at 900 C. for 3 hours in an atmosphere of nitrogen or a reducing gas. In another embodiment indium hydroxide is used in place of antimony trioxide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2158644-A |
| priorityDate | 1958-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.