http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-826063-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f261780217da1bf6c1b39ab661cb26d7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1957-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1959-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-826063-A |
| titleOfInvention | Improvements in or relating to semiconductor devices and methods of fabricating same |
| abstract | 826,063. Semi-conductor devices. PHILCO CORPORATION. May 3, 1957 [May 18, 1956], No. 14162/57. Class 37. A semi-conductor device comprises a body of one conductivity type having an emitter region of opposite conductivity type with a majority carrier concentration greater than 10<SP>18</SP> per c.c. and less than 0.01 mil. thickness. Fig. 1 shows a transistor consisting of an N- type germanium wafer 10 with ohmic base connection 12 and emitter and collector contacts 16 and 20. Depressions 14 and 15 may be provided by jet-electrolytic etching and a small metallic coating then provided by jet-electrolytic plating, as described in Specification 805,291. The etching and plating bath may consist of indium sulphate, ammonium chloride and water, so that on reversal of polarity, a small deposit of indium is provided. A small quantity of acceptor material having high solubility in the semi-conductor such as gallium is then placed on the indium and a wire carrying current placed near to heat the gallium and indium to about 170‹ C. for a few seconds to provide an alloy junction having a P-type region having more than 10<SP>18</SP> impurity atoms per c.c. and being of 0.01 mil. thickness or less. Leads 18 and 20 may be provided by using an indiumcadmium eutectic solder. The device may then be cleaned with a solution of glyoxal, nitric and hydrofluoric acids. Aluminium, antimony-bismuth and antimony are also specified as suitable impurities for use with germanium, and boron, phosphorus, arsenic and antimony for use with silicon. Specification 694,021 also is referred to. |
| priorityDate | 1956-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.