http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-794896-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66c37c127b4c84bee2f039e646d7a7ed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1955-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f9d2093749ef469b0c0f69e6d0a8d1c |
| publicationDate | 1958-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-794896-A |
| titleOfInvention | Improvements in or relating to electro-forming processes for semiconductor devices |
| abstract | 794,896. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. June 3, 1955, No. 15975/55. Class 37. A point contact semi-conductor device is electroformed by passing current through the contact, while the semi-conductor crystal is maintained at a temperature sufficiently high to ensure that its conductivity is intrinsic. In Fig. 1, the crystal 1 of N-type Ge or Si is placed in an oven 4 heated by element 5, and current pulses from a charged capacitor 9 are applied through point contact 3. Alternatively, the electroforming current may be applied from a constant voltage, or a constant current source. In the case of germanium, the temperature necessary to ensure that the conductivity is intrinsic (i.e. that the thermally generated carriers are sufficiently numerous to render insignificant the carriers due to lattice imperfections) lies between 150‹ and 300‹ C. The process facilitates control of electroforming by eliminating uncertainties due to variations in the electrical properties of the semi-conductor material. Specifications 747,198 and 794,895 are referred to. |
| priorityDate | 1955-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954 |
Total number of triples: 21.