http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-672732-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66c37c127b4c84bee2f039e646d7a7ed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-479 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-479 |
| filingDate | 1949-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_930555dcf961e4505afd9fd023da3ec0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_231ac40eead6f918f3ea4b786ce8b06f |
| publicationDate | 1952-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-672732-A |
| titleOfInvention | Improvements in or relating to electric current rectifiers |
| abstract | 672,732. Asymmetrically-conducting resistances. STANDARD TELEPHONES & CABLES, Ltd. Aug. 25, 1950 [Aug. 26, 1949], No. 22203/49. Class 37. A rectifier comprises a semi-conductor layer separated by a barrier layer from the counter electrode, the semi-conductor layer being deficient in oxygen in comparison with the barrier layer. Preferably the semi-conductor layer is titanium dioxide in conducting condition and the barrier layer is a thin film of titanium dioxide in non-conducting condition. Titanium dioxide is compressed to a disc having a density of 3.5, is dried and heated to 1050 C. for 1¢ hours and then to 1300 ‹ C. for an hour, being allowed to cool in a hydrogen atmosphere which may contain nitrogen. A base electrode of silver is deposited, the opposite face being polished and heated to 500 ‹C. in an oxygas flame; alternatively, this surface may be oxidized chemically or electrolytically, e.g. by anodic treatment in sulphuric or oxalic acid. A separate barrier of titanium dioxide layer may be deposited from titanium tetrachloride or butyl titanate. A counter-electrode of lead foil or tellurium is then applied, or a silver counterelectrode may be deposited; if tellurium is used, it may be mixed with a metal oxide, e.g. thallic oxide. Barium or other titanate may be used in place of titanium dioxide, or the titanium dioxide, or the titanium dioxide may be mixed with other metallic oxides. Where a back-plate is required to give rigidity, a layer of iron particles and a layer of the semi-conductor are sintered, or titanium dioxide may be deposited on an iron plate by the decomposition of butyl titanate. Specification 569,388, [Group II], is referred to. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3121830-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2796564-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2826725-A |
| priorityDate | 1949-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.