http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2598263-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c38bbc7e82e79c6b6082f14b5f4859f9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02049 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00936 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d91508279807e1b1bbf718ecaed19b8c |
| publicationDate | 2022-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2598263-A |
| titleOfInvention | Method of manufacturing a microstructure |
| abstract | Method of manufacturing a microstructure comprises employing a hydrogen fluoride (HF) vapour to etch a sacrificial layer of silicon dioxide (SiO2) and removing a residue or residual layer formed in said etch, wherein the residual layer comprises ammonium salt (NH4). Removing the residual layer may comprise heating the ammonium salt to a temperature greater than 160 degrees. This may increase the volatility of the residual layer so that it can be removed using a vacuum pumping system. The vapour etching of the sacrificial layer of silicon dioxide and the removal of the solid residual layer may be performed sequentially within a common or separate processing chambers. The residual layer may comprise silicon or carbon instead of an ammonium salt. When the residual layer comprises silicon, the residual layer can be reacted with a hydrogen gas to produce silane (SiH4). The microstructure may comprise a micro-electromechanical system (MEMS) or semiconductor device. |
| priorityDate | 2019-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.