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filingDate 2020-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2597267-A
titleOfInvention Thin film transistor gas sensor system
abstract A gas sensor system comprising a first top-gate thin film transistor (TFT) gas sensor (100, fig 1) configured to detect a first target gas and comprising a first dielectric layer 109; a second top-gate TFT gas sensor (200, fig 1) configured to detect a second target gas and comprising a second dielectric layer 109, wherein the first dielectric layer and second dielectric layer differ in at least one of thickness and composition. The first and second dielectric layers may each comprise a polymer. These polymers may be different. The first layer may comprise a first material and the second layer may comprise a second material, these two being different. The first material may have greater polarity and polarity Hansen solubility parameter than the second material. The first material may be protic and may be substituted with a hydroxyl or amino group. The second material may be aprotic. The first target gas may be ethylene. The second target gas may be 1-methylcyclopropene (1-MCP). A method of detecting the presence or concentration of the target gases using the system is disclosed.
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