http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2569994-A

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filingDate 2018-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09bcab6883712f3ac72070c197acef20
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publicationDate 2019-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2569994-A
titleOfInvention A dual band photodiode element and method of making the same
abstract A photodiode responsive to dual band radiation, comprising: first 104 and second 106 p-type regions; an n-type region 105 arranged between the p-type regions to provide PN-junctions 109, 110; a shorter waveband absorbing region and a longer waveband absorbing region, provided by one or more of the p-type regions and the n-type region; an n-type barrier, provided by the n-type region, being non-absorbent to the longer waveband; a further n-type region 107 that interfaces with the first n-type region; and, two ohmic contacts 111, 112 arranged on the second p-type region and the further n-type region respectively. A portion of the second p-type region may be type converted to provide the further n-type region. A Mercury-Cadmium-Telluride semiconductor may be used to form the regions. The photodiode may be in mesa form and may be used in a detector array.
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Total number of triples: 27.