Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_328935cf63d844e358b4a7a694e4850f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3736 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-722 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B37-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K5-14 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 |
filingDate |
2015-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c08e152c1093eeabe1b3b7b9209c8bf5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13597956fdb2213b8276922d8aaf2af2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81448554aefa5e612920a00ae49600c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_976c21475df8a8642a034330089a0788 |
publicationDate |
2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
GB-2534659-A |
titleOfInvention |
Bonding scheme for diamond components which has low thermal barrier resistance in high power density applications |
abstract |
A diamond heat spreader which may be bonded to a semiconductor component via a metal bond; wherein the metal bond comprises a layer of chromium (Cr) bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component. In one embodiment the semiconductor component is configured to operate at a high areal power density of at least 1 kW/cm2 and/or a high linear power density of at least 1 W/mm. The further metal layer may be gold (Au), silver (Ag), tantalum (Ta), tin (Sn) or a combination of these metals. The chromium may have a thickness between 5 and 500nm. The further metal layer may have a thickness of 5 to 100 micrometres including a solder or braze material. The diamond heat spreader may be further defined by at least its surface roughness, its thermal conductivity, its nitrogen concentration. |
priorityDate |
2014-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |