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filingDate 2015-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2534659-A
titleOfInvention Bonding scheme for diamond components which has low thermal barrier resistance in high power density applications
abstract A diamond heat spreader which may be bonded to a semiconductor component via a metal bond; wherein the metal bond comprises a layer of chromium (Cr) bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component. In one embodiment the semiconductor component is configured to operate at a high areal power density of at least 1 kW/cm2 and/or a high linear power density of at least 1 W/mm. The further metal layer may be gold (Au), silver (Ag), tantalum (Ta), tin (Sn) or a combination of these metals. The chromium may have a thickness between 5 and 500nm. The further metal layer may have a thickness of 5 to 100 micrometres including a solder or braze material. The diamond heat spreader may be further defined by at least its surface roughness, its thermal conductivity, its nitrogen concentration.
priorityDate 2014-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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